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M57962K
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
Gate Driver
Outline Drawing
51 MAX
Hybrid Integrated Circuit For Driving IGBT Modules
Description: M57962K is a hybrid integrated circuit designed to provide optimum gate drive for IGBT modules. This device provides high current optically isolated gate drive with a large output voltage swing. The driver also provides short circuit protection based on desaturation detection. Features: Electrical Isolation between input and output with opto-couplers. (Viso = 3750VRMS for 1 min.) Two supply drive topology
5V O
GATE SHUTDOWN CIRCUIT
27 MAX
4.5 1.5 3 MAX 2.54 0.5+0.15/-0.1 6.5 MAX 12.5 MAX 10 MAX
0.25+0.2/-0.1
7.5 MAX
14
1
Block Diagram
4 VCC
LATCH DETECT CIRCUIT
2 CONTROL PIN FOR ttrip 1 DETECT PIN
14
TIMER & RESET CIRCUIT INTERFACE
OPTO-COUPLER 180
8
FAULT OUTPUT
Built in short circuit protection circuit with a pin for fault output TTL compatible input interface
13
6 V EE 3 , 7 - NC
Application: To drive IGBT modules for general industrial use apparatus. Recommended Modules: VCES = 600V Series (up to 600A Class) VCES = 1200V Series (up to 400A Class) VCES = 1700V Series (up to 400A Class)
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 M57962K Hybrid IC for IGBT Gate Driver
Absolute Maximum Ratings, Ta =25C unless otherwise specified
Item Supply Voltage Input Voltage Output Voltage Output Current Isolation Voltage Case Temperature Operating Temperature Storage Temperature Fault Output Current Input Voltage Symbol VCC VEE VI VO IOHP IOLP Viso Tc Topr tstg IFO VR1 No Condensation Allowable No Condensation Allowable Applied Pin Applied Pin
8 1
Test Conditions DC DC Applied between:
13
Limit 18 -15 -
14
Units Volts Volts Volts Volts Amperes Amperes VRMS C C C mA Volts
-1 ~ 7 VCC -5 5 3750 85 -20 ~ 60 -25 ~ 100 20 50
50% Duty Cycle, Pulse Width 1ms Output Voltage "H" Pulse Width 2s, f 20kHz Pulse Width 2s, f 20kHz Sinewave Voltage 60Hz, 1 min.
Electrical Characteristics, Ta = 25C, VCC = 15V, VEE = -10V unless otherwise specified
Characteristics Supply Voltage Pull-up Voltage on Input Side "H" Input Current Switching Frequency Gate Resistance "H" Input Current "H" Output Voltage "L" Output Voltage "L-H" Propagation Time "L-H" Rise Time "H-L" Propagation Time "H-L" Fall Time Timer Fault Output Current Controlled Time Detect Short Circuit 1 Controlled Time Detect Short Circuit 2* SC Detect Voltage Symbol VCC VEE VIN IIH f RG IIH VOH VOL tPLH tr tPHL tf ttimer IFO ttrip1 ttrip2 Pin VSC
2
Test Conditions Recommended Range Recommended Range Recommended Range Recommended Range Recommended Range Recommended Range VIN = 5V
Min. 14 -7 4.75 15.2 -- 2 -- 13 -8
Typ. 15 -- 5.00 16 -- -- 16 14 -9 0.5 0.3 1.0 0.3 -- 5.0 2.6 3.0 --
Max. -- -10 5.25 19 20 -- -- -- -- 1.0 1.0 1.3 1.0 2.0 -- -- -- --
Units Volts Volts Volts mA kHz mA Volts Volts s s s s ms mA s s Volts
IIH = 16mA IIH = 16mA IIH = 16mA IIH = 16mA Between start and cancel (under input sign "L") Applied Pin -
1 8
-- -- -- -- 1.0 -- -- -- 15
pin, R = 4.7k
2
: 15V and more, Pin Pin
1
: Open
: 15V and more,
4
: 10pF (Connective Capacitance)
Collector Voltage of Module
*Length of wiring of condenser controlled time detect short circuit is within 5cm from 2 and 4 pin coming and going.
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 M57962K Hybrid IC for IGBT Gate Driver
PROPAGATION DELAY TIME VS. AMBIENT TEMPERATURE CHARACTERISTICS (TYPICAL)
PROPAGATION DELAY TIME VS. SIGNAL VOLTAGE CHARACTERISTICS (TYPICAL)
CONTROLLED TIME DETECT VS. AMBIENT TEMPERATURE CHARACTERISTICS (TYPICAL)
1.6
PROPAGATION DELAY TIME "L-H", tPLH, ( s) PROPAGATION DELAY TIME "H-L", tPHL, ( s)
1.6
PROPAGATION DELAY TIME "L-H", tPLH, ( s) PROPAGATION DELAY TIME "H-L", tPHL, ( s)
6
VCC = 15V VEE = -10V RG = 3.1 Ta = 25C tPHL tPLH
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0
1.2 1.0 0.8 0.6 0.4 0.2
CONTROLLED TIME DETECT SHORT CIRCUIT, ttrip1, ttrip2, ( s)
VCC = 15V VEE = -10V RG = 3.1 VIN = 5V tPHL tPLH
1.4
5 4 3 2 1 0
VCC = 15V VEE = -10V ttrip2 : Ctrip = 1000pF ttrip1 : Ctrip = 0
20
40
60
80
0 3.5
4.0
4.5
5.0
5.5
6.0
0
20
40
60
80
AMBIENT TEMPERATURE, Ta, (C)
INPUT SIGNAL VOLTAGE, VI, (VOLTS)
AMBIENT TEMPERATURE, Ta, (C)
CONTROLLED TIME DETECT VS. CONNECTIVE CAPACITANCE CHARACTERISTICS (TYPICAL)
POWER DISSIPATION VS. AMBIENT TEMPERATURE (MAXIMUM RATING)
DISSIPATION CURRENT VS. SUPPLY VOLTAGE INPUT SIGNAL "L" (TYPICAL)
9 8
CONTROLLED TIME DETECT SHORT CIRCUIT, ttrip, ( s) POWER DISSIPATION, PD, (WATTS)
5
VCC = 15V VEE = -10V Ta = 25C
25
Ta = 25C
6 5 4 3 2 1 0 0 25 50 75 100 125 150
DISSIPATION CURRENT, (mA)
7
4 3 2 1
20 15
10 5
0
0
20
40
60
80
0
0
10
20
30
40
CONNECTIVE CAPACITANCE, Ctrip, (pF) PIN: 2 4
AMBIENT TEMPERATURE, Ta, (C)
SUPPLY VOLTAGE, VCC, (VOLTS) APPLIED BETWEEN: 4 6
Switching Time Definitions
VIN
Short Circuit Protection
VIN
0V
VOUT
tr
tf 90% 50% 10%
VOUT 0V
-5V ttrip 1, 2 10V ttimer 10V
0V tPLH tPHL 8 Pin Output
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 M57962K Hybrid IC for IGBT Gate Driver
Application Circuit
M57962K
+5V B1 14 13 10 9 8 6 5 4 3 2 + PS2501 + + C1 4.7k + VCC + VEE C2 RG 18V 18V G E E CF C IGBT MODULE Ctrip 30V 1 RF D1
CONTROL FAULT
Component Selection:
Design VCC, VEE RG C1, C2 D1 Ctrip B1 RF CF Description +15V/-10V Typical, See data sheet for usable limits Adjust for application requirements. See IGBT module application notes for recommendations and power rating 10F-100F 25V low impedance electrolytic Ultra fast recovery trr<100ns, High voltage Vrrm>Vces(IGBT) 0-200pF adjusts desaturation trip time (ttrip) CMOS Buffer 74HC04 or similar - Must actively pull high to maintain noise immunity 390 - 510 (Usually unnecessary) 100pF - 470pf (Usually unnecessary)
Notes:
(1) Power supply decoupling capacitors C1 and C2 should be connected as close as possible to the pins of the gate driver and must be sized to have appropriate ESR and ripple current capability for the IGBT being driven. (2) Ctrip should be connected as close as possible to the pins of the gate driver to avoid noise pick-up. (3) All zener diodes 1W, all resistors 0.25W unless otherwise noted. (4) When RG is less than 3 times the minimum value, Collector Voltage surges may affect Gate Drive.
M57962K
+5V B1 14 13 10 9 8 6 5 4 3 2 + PS2501 + + C1 4.7k C2 RG 18V 18V 2.7k VCC 8.2V G E E CF C IGBT MODULE Ctrip 30V 1 RF D1
CONTROL FAULT
+
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 M57962K Hybrid IC for IGBT Gate Driver
General Description The M57962K is a hybrid integrated circuit designed to provide gate drive for high power IGBT modules. This circuit has been optimized for use with Powerex 1700V IGBT modules. However, the output characteristics are compatible with most MOS gated power devices. The M57962K features a compact single-inline package design. The upright mounting minimizes required printed circuit board space to allow efficient and flexible layout. The M57962K converts logic level control signals into fully isolated +15V/-8V gate drive with up to 5A of peak drive current. Control signal isolation is provided by an integrated high speed optocoupler. Short circuit protection is provided by means of destauration detection. Short Circuit Protection Figure 1 shows a block diagram of a typical desaturation detector. In this circuit, a high voltage fast recovery diode (D1) is connected to the IGBT's collector to monitor the collector to emitter voltage. When the IGBT is in the off state, VCE is high and D1 is reverse biased. With D1 off the (+) input of the comparator is pulled up to the positive gate drive power supply (V+) which is normally +15V. When the IGBT turns on, the comparators (+) input is pulled down by D1 to the IGBT's VCE(sat). The (-) input of the comparator is supplied with a fixed voltage (VTRIP). During a normal on-state condition the comparator's (+) input will be less than VTRIP and it's output will be low. During a normal off-state condition the comparator's (+) input will be larger than
V+ D1 + DELAY ttrip AND SHUTDOWN INPUT GATE DRIVE RG G E E COMPARE Vtrip C IGBT MODULE
VTRIP and it's output will be high. If the IGBT turns on into a short circuit, the high current will cause the IGBT's collector-emitter voltage to rise above VTRIP even though the gate of the IGBT is being driven on. This abnormal presence of high VCE when the IGBT is supposed to be on is often called desaturation. Desaturation can be detected by a logical AND of the driver's input signal and the comparator output. When the output of the AND goes high a short circuit is indicated. The output of the AND can be used to command the IGBT to shut down in order to protect it from the short circuit. A delay (tTRIP) must be provided after the comparator output to allow for the normal turn on time of the IGBT. The tTRIP delay is set so that the IGBTs Vce has enough time to fall below VTRIP during normal turn on switching. If tTRIP is set too short, erroneous desaturation detection will occur. The maximum allowable tTRIP delay is limited by the IGBT's short circuit withstanding capability. In typical applications using Powerex IGBT modules the recommended limit is 10s. Operation of the M57962K Desaturation Detector The Powerex M57962K incorporates short circuit protection using desaturation detection as described above. A flow chart for the logical operation of the short-circuit protection is shown in Figure 2. When a desaturation is detected the hybrid gate driver performs a soft shut down of the IGBT and starts a timed (ttimer) 1.5ms lock out. The soft turn-off helps to limit the transient voltage that may be generated while interrupting the large short circuit current flowing in the IGBT. During the lock out the driver pulls Pin 8 low to indicate the fault status. Normal operation of the driver will resume after the lock-out time has expired and the control input signal returns to its off state. Adjustment of Trip Time The M57962K has a default short-circuit detection time delay (tTRIP) of approximately 2.5s. This will prevent erroneous detection of short-circuit conditions as long as the series gate resistance (RG) is near the minimum recommended value for the module being used. The 2.5s delay is appropriate for most applications so adjustment will not be necessary. However, in some low frequency applications it may be desirable to use a larger series gate resistor to slow the switching of the IGBT, reduce noise, and limit turn-off transient voltages. When RG is increased, the switching
Figure 1. Desaturation Detector
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 M57962K Hybrid IC for IGBT Gate Driver
START
IS VCE > VSC NO
YES IS INPUT SIGNAL ON
NO
delay time of the IGBT will also increase. If the delay becomes long enough so that the voltage on the detect Pin 1 is greater than VSC at the end of the tTRIP delay the driver will erroneously indicate that a short circuit has occurred. To avoid this condition the M57962K has provisions for extending the tTRIP delay by connecting a capacitor (CTRIP) between Pin 2 and VCC (Pins 4). The effect of adding CTRIP on trip time is shown in Figure 3. If tTRIP is extended care must be exercised not to exceed the short-circuit withstanding capability of the IGBT module. Normally this will be satisfied for Powerex NF and A-Series IGBT modules as long as the total shut-down time does not exceed 10s.
YES DELAY ttrip FAULT SIGNAL (PIN 8) YES IS VCE > VSC ttrip 10V
ttimer 10V
NO
YES
-5V VO (PIN 5)
SLOW SHUTDOWN DISABLE OUTPUT SET FAULT SIGNAL WAIT ttimer
Figure 3. Adjustment of ttrip
YES IS INPUT SIGNAL OFF
NO
YES CLEAR FAULT SIGNAL ENABLE OUTPUT
Figure 2. VLA504-01 Desaturation Detector
6
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